15gn01ma no. a1100-1/7 features ? small on-resistance [ron=2 (i b =3ma)] ? small output capacitance [cob=1.1pf (v cb =10v)] speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector-to-base voltage v cbo 15 v collector-to-emitter voltage v ceo 8v emitter-to-base voltage v ebo 3v collector current i c 50 ma collector dissipation p c when mounted on ceramic substrate (250mm 2 0.8mm) 400 mw junction temperature tj 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7023a-009 ordering number : ena1100a 71812 tkim/93009ab tkim tc-00002115 15gn01ma npn epitaxial planar silicon transistor vhf to uhf band high-frequency switching, high-frequency general-purpose ampli er applications http:// semicon.sanyo.com/en/network sanyo semiconductors data sheet product & package information ? package : mcp ? jeita, jedec : sc-70, sot-323 ? minimum packing quantity : 3,000 pcs./reel packing type: tl marking electrical connection za lot no. lot no. tl 1 : base 2 : emitter 3 : collector sanyo : mcp 3 12 2.0 0.425 0.425 0.3 0.65 2.1 0.9 1.25 0.3 0.2 0 to 0.08 0.15 15gn01ma-tl-e 3 2 1
15gn01ma no. a1100-2/7 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max collector cutoff current i cbo v cb =10v, i e =0a 0.5 a emitter cutoff current i ebo v eb =2v, i c =0a 0.5 a dc current gain h fe v ce =5v, i c =10ma 200 400 gain-bandwidth product f t v ce =5v, i c =10ma 1.0 1.5 ghz output capacitance cob v cb =10v, f=1mhz 1.1 1.5 pf collector-to-emitter saturation voltage v ce (sat) i c =20ma, i b =2ma 0.06 0.12 v output on resistance ron i b =3ma, f=10khz 2.0 ordering information device package shipping memo 15gn01ma-tl-e mcp 3,000pcs./reel pb free 0 0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50 60 base-to-emitter voltage, v be -- v collector current, i c -- ma it06248 i c -- v be 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 1 2 3 4 5 6 7 8 9 10 collector-to-emitter voltage, v ce -- v collector current, i c -- ma i c -- v ce it06247 0 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0 5 10 15 20 25 30 35 40 45 50 collector-to-emitter voltage, v ce -- v collector current, i c -- ma i c -- v ce it06246 i b =0ma 0.05ma 0.10ma 0.15ma 0.20ma 0.25ma 0.30ma v ce =5v 5 7 100 2 3 h fe -- i c 1.0 23 57 23 57 10 23 57 100 collector current, i c -- ma dc current gain, h fe it05405 v ce =5v i b =0 a 5 a 10 a 15 a 20 a 25 a 30 a 35 a 40 a 45 a
15gn01ma no. a1100-3/7 0 20 40 60 80 100 120 140 160 0 50 100 150 200 250 300 350 400 450 it06251 collector dissipation, p c -- mw p c -- ta 1 2 4 3 6 5 7 8 9 10 0.1 23 57 23 5 1.0 ron -- i b base current, i b -- ma ambient temperature, ta -- c output on resistance, ron -- it05403 f=10khz in out 1k 10k i b when mounted on ceramic substrate (250mm 2 ? 0.8mm) 3 1.0 57 2 3 57 10 23 57 2 3 5 7 0.1 2 0.01 collector current, i c -- ma collector-to-emitter saturation voltage, v ce (sat) -- v it06249 v ce (sat) -- i c i c / i b =10 0.1 23 57 1.0 23 57 10 5 7 2 3 5 1.0 collector-to-base voltage, v cb -- v reverse transfer capacitance, cre -- pf it06250 cre -- v cb f=1mhz 3 5 5 7 1.0 2 3 1.0 23 57 23 57 10 100 f t -- i c collector current, i c -- ma gain-bandwidth product, f t -- ghz it05402 v ce =5v cob -- v cb collector-to-base voltage, v cb -- v output capacitance, cob -- pf it05404 0.1 23 5 5 723 7 1.0 10 5 7 2 5 3 1.0 f=1mhz
15gn01ma no. a1100-4/7 s parameters (common emitter) v ce =5v, i c =5ma, z o =50 freq(mhz) ? s11 ? s11 ? s21 ? s21 ? s12 ? s12 ? s22 ? s22 100 0.662 -25.65 4.631 122.00 0.028 71.36 0.765 -10.50 200 0.582 -36.72 3.028 112.20 0.051 68.80 0.732 -14.15 300 0.529 -47.21 2.353 104.69 0.071 65.59 0.713 -17.91 400 0.487 -56.61 1.955 97.68 0.088 63.00 0.700 -21.58 500 0.459 -65.82 1.691 91.07 0.103 60.43 0.689 -25.23 600 0.429 -74.14 1.496 85.11 0.116 57.83 0.679 -28.81 700 0.409 -82.44 1.353 79.01 0.128 56.22 0.674 -32.38 800 0.388 -89.94 1.239 73.29 0.138 54.76 0.671 -35.89 900 0.374 -96.79 1.149 67.98 0.148 53.44 0.671 -39.34 1000 0.365 -103.28 1.072 63.13 0.156 52.60 0.670 -42.75 v ce =5v, i c =10ma, z o =50 freq(mhz) ? s11 ? s11 ? s21 ? s21 ? s12 ? s12 ? s22 ? s22 100 0.587 -31.65 6.647 118.78 0.026 71.86 0.694 -11.96 200 0.502 -46.40 4.239 108.57 0.046 68.22 0.653 -15.76 300 0.444 -59.47 3.227 100.32 0.064 65.90 0.630 -19.10 400 0.405 -70.80 2.616 93.18 0.079 63.91 0.619 -22.50 500 0.381 -81.80 2.217 86.64 0.093 62.30 0.607 -25.83 600 0.356 -91.29 1.922 80.82 0.105 60.39 0.598 -29.19 700 0.342 -101.15 1.715 74.86 0.115 59.29 0.596 -32.72 800 0.329 -109.42 1.544 69.40 0.125 58.34 0.593 -36.10 900 0.319 -116.99 1.414 64.16 0.135 57.86 0.594 -39.48 1000 0.315 -124.06 1.305 59.41 0.144 57.47 0.593 -42.80 v ce =5v, i c =20ma, z o =50 freq(mhz) ? s11 ? s11 ? s21 ? s21 ? s12 ? s12 ? s22 ? s22 100 0.505 -41.07 8.945 114.82 0.023 71.42 0.611 -13.64 200 0.417 -60.49 5.500 103.75 0.042 69.03 0.568 -16.14 300 0.369 -76.83 4.039 95.20 0.056 67.39 0.548 -18.89 400 0.341 -90.31 3.197 88.11 0.070 66.22 0.539 -21.75 500 0.328 -102.08 2.654 81.71 0.082 65.43 0.533 -24.77 600 0.316 -112.57 2.264 76.38 0.094 64.49 0.528 -27.99 700 0.311 -122.49 1.988 70.80 0.104 64.03 0.530 -31.32 800 0.306 -130.50 1.771 65.75 0.115 63.95 0.530 -34.57 900 0.304 -137.80 1.605 60.92 0.125 64.09 0.534 -37.93 1000 0.306 -144.30 1.470 56.51 0.135 64.16 0.537 -41.24
15gn01ma no. a1100-5/7 embossed taping speci cation 15gn01ma-tl-e
15gn01ma no. a1100-6/7 outline drawing land pattern example 15gn01ma-tl-e mass (g) unit 0.006 * for reference mm unit: mm 0.65 0.65 2.1 0.7 1.0
15gn01ma no. a1100-7/7 ps this catalog provides information as of july, 2012. speci cations and information herein are subject to change without notice. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. regarding monolithic semiconductors, if you should intend to use this ic continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. please contact us for a confirmation. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
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